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Observation of blue-shifted photoluminescence in stacked InAs/GaAs quantum dots

Identifieur interne : 00CF22 ( Main/Repository ); précédent : 00CF21; suivant : 00CF23

Observation of blue-shifted photoluminescence in stacked InAs/GaAs quantum dots

Auteurs : RBID : Pascal:03-0281004

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Nanomatériau, Nanostructure, Point quantique, Semiconducteur III-V, Indium arséniure, Hétérojonction, Croissance cristalline en phase vapeur, Epitaxie jet moléculaire, Multicouche, Photoluminescence, Déplacement raie, Effet dimensionnel quantique, 7867H, 7855C, 8107T, InAs, As In.

English descriptors

KwdEn :
- Crystal growth from vapors, Experimental study, Heterojunctions, III-V semiconductors, Indium arsenides, Molecular beam epitaxy, Multilayers, Nanostructured materials, Nanostructures, Photoluminescence, Quantum dots, Quantum size effect, Spectral line shift.

Abstract

We report a blue-shifted photoluminescence (PL) of closely stacked InAs/GaAs quantum dots (QDs) grown via molecular beam epitaxy on GaAs(100) substrates. Room temperature PL and chemical etching were used to isolate and characterize the quantum dot layers. PL measurements showed that there is a significant shifting to higher energy caused by the deposition of a second layer of QDs. Such shifting is present only in closely stacked QD layers. This would imply that the first QD layer capped with a 100 Å GaAs generates a strain field that not only causes vertical alignment but could also lead to the formation of a second QD layer with different structure and dimension than the first QD layer grown.

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Pascal:03-0281004

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Observation of blue-shifted photoluminescence in stacked InAs/GaAs quantum dots</title>
<author><name sortKey="Somintac, A" uniqKey="Somintac A">A. Somintac</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Condensed Matter Physics Laboratory National Institute of Physics, University of the Philippines, Diliman</s1>
<s2>1101 Quezon City</s2>
<s3>PHL</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Philippines</country>
<wicri:noRegion>1101 Quezon City</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Estacio, E" uniqKey="Estacio E">E. Estacio</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Condensed Matter Physics Laboratory National Institute of Physics, University of the Philippines, Diliman</s1>
<s2>1101 Quezon City</s2>
<s3>PHL</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Philippines</country>
<wicri:noRegion>1101 Quezon City</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Salvador, A" uniqKey="Salvador A">A. Salvador</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Condensed Matter Physics Laboratory National Institute of Physics, University of the Philippines, Diliman</s1>
<s2>1101 Quezon City</s2>
<s3>PHL</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>Philippines</country>
<wicri:noRegion>1101 Quezon City</wicri:noRegion>
</affiliation>
</author>
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<publicationStmt><idno type="inist">03-0281004</idno>
<date when="2003">2003</date>
<idno type="stanalyst">PASCAL 03-0281004 INIST</idno>
<idno type="RBID">Pascal:03-0281004</idno>
<idno type="wicri:Area/Main/Corpus">00D247</idno>
<idno type="wicri:Area/Main/Repository">00CF22</idno>
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<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Crystal growth from vapors</term>
<term>Experimental study</term>
<term>Heterojunctions</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Molecular beam epitaxy</term>
<term>Multilayers</term>
<term>Nanostructured materials</term>
<term>Nanostructures</term>
<term>Photoluminescence</term>
<term>Quantum dots</term>
<term>Quantum size effect</term>
<term>Spectral line shift</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Nanomatériau</term>
<term>Nanostructure</term>
<term>Point quantique</term>
<term>Semiconducteur III-V</term>
<term>Indium arséniure</term>
<term>Hétérojonction</term>
<term>Croissance cristalline en phase vapeur</term>
<term>Epitaxie jet moléculaire</term>
<term>Multicouche</term>
<term>Photoluminescence</term>
<term>Déplacement raie</term>
<term>Effet dimensionnel quantique</term>
<term>7867H</term>
<term>7855C</term>
<term>8107T</term>
<term>InAs</term>
<term>As In</term>
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<front><div type="abstract" xml:lang="en">We report a blue-shifted photoluminescence (PL) of closely stacked InAs/GaAs quantum dots (QDs) grown via molecular beam epitaxy on GaAs(100) substrates. Room temperature PL and chemical etching were used to isolate and characterize the quantum dot layers. PL measurements showed that there is a significant shifting to higher energy caused by the deposition of a second layer of QDs. Such shifting is present only in closely stacked QD layers. This would imply that the first QD layer capped with a 100 Å GaAs generates a strain field that not only causes vertical alignment but could also lead to the formation of a second QD layer with different structure and dimension than the first QD layer grown.</div>
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<fA14 i1="01"><s1>Condensed Matter Physics Laboratory National Institute of Physics, University of the Philippines, Diliman</s1>
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<fA15 i1="02"><s1>Penn State University</s1>
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<fA15 i1="03"><s1>University of California at San Diego</s1>
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Observation of blue-shifted photoluminescence in stacked InAs/GaAs quantum dots

Observation of blue-shifted photoluminescence in stacked InAs/GaAs quantum dots

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri